Chemical-Mechanical Planarization (CMP) Research

Choi, S. H.; Yim, J.; Lim, J.; Kim, S.; Jeong, Y.; Bae, K.; Seo, J.; Lee, K., Tailored electrostatic attraction force between anionic polymer and Si3N4 film in consecutive gate poly open CMP. Materials Science in Semiconductor Processing 2024, 184, 108761. Digital Object Identifier: 10.1016/j.mssp.2024.108761

Gamagedara, K.; Roy, D., Experimental Strategies for Studying Tribo-Electrochemical Aspects of Chemical–Mechanical Planarization. Lubricants 2024, 12 (2), 63. Digital Object Identifier: 10.3390/lubricants12020063

Liu, M.; Zhang, B.; Seo, J.; Xian, W.; Cui, D.; Liu, S.; Wang, Y.; Qin, S.; Liu, Y., Development of Highly stable ceria slurry in acetic acid-ammonium acetate buffer Media for effective chemical mechanical polishing of silicon dioxide. Materials Science in Semiconductor Processing 2024, 177, 108411. Digital Object Identifier: 10.1016/j.mssp.2024.108411

Nguyen, V. T.; Wait, J.; Nishi, T.; Hamada, S.; Himaya, H.; Seo, J., Systematic root cause analysis of ceria-induced defects during chemical mechanical planarization and cleaning. Journal of Manufacturing Processes 2024, 127, 27-34. Digital Object Identifier: 10.1016/j.jmapro.2024.07.102

Othman, A.; Gowda, A.; Andreescu, D.; Hassan, M. H.; Babu, S. V.; Seo, J.; Andreescu, S., Two decades of ceria nanoparticle research: structure, properties and emerging applications. Materials Horizons 2024, 11 (14), 3213-3266. Digital Object Identifier: 10.1039/d4mh00055b

Othman, A.; Kim, H. J.; Trivedi, R.; Kulasingam, T.; Seo, J., Understanding and mitigating temperature-induced agglomeration in silica-based chemical mechanical planarization (CMP) slurry storage. Colloids and Surfaces A: Physicochemical and Engineering Aspects 2024, 691, 133802. Digital Object Identifier: 10.1016/j.colsurfa.2024.133802

Park, S.; Seo, J., Comparative first-principles analysis of crystalline versus amorphous CeO2 particles: implications for chemical mechanical planarization. Journal of Materials Science 2024, 59 (25), 11405-11415. Digital Object Identifier: 10.1007/s10853-024-09861-5

Santefort, D. R.; Roy, D., Electrochemistry of copper post-CMP cleaning examined in combination with brush-scrubbing in a malonic acid solution. Journal of Electroanalytical Chemistry 2024, 953, 118016. Digital Object Identifier: 10.1016/j.jelechem.2023.118016

Seo, J.; Hur, J. U.; Kim, S.; Kim, Y. S.; Kim, Y. H.; Bae, K.; Lee, K.; An, G. S., Recovery and reuse of magnetic silica-coated iron oxide particles for eco-friendly chemical mechanical planarization. Colloids and Surfaces A: Physicochemical and Engineering Aspects 2024, 694, 134064. Digital Object Identifier: 10.1016/j.colsurfa.2024.134064

Seo, J.; Ryu, S.; Kwon, J.; Lee, K., Structural dependency of pyridine carboxylic acid isomers in metal-organic coordination adsorption for copper corrosion inhibition. Applied Surface Science 2024, 663, 160149. Digital Object Identifier: 10.1016/j.apsusc.2024.160149

Tran, T. T. H.; Gichovi, J.; Commane, J.; Podlaha, E. J.; Seo, J., Examining amino acids as environmentally friendly corrosion inhibitors for Cu and Co chemical mechanical planarization. Journal of Environmental Chemical Engineering 2024, 12 (5), 113669. Digital Object Identifier: 10.1016/j.jece.2024.113669

Venkataswamy, R.; Trimble, L.; McDonald, A.; Nevers, D.; Bengochea, L. V.; Carswell, A.; Rossner, A.; Seo, J., Environmental Impact Assessment of Chemical Mechanical Planarization Consumables: Challenges, Future Needs, and Perspectives. ACS Sustainable Chemistry and Engineering 2024, 12 (32), 11841-11855. Digital Object Identifier: 10.1021/acssuschemeng.4c03195

Venkataswamy, R.; Trimble, L.; Ryu, S.; Le, N. T.; Park, K.; Kang, H.; Seo, J., Atomic-level insights into CeO2 performance: Chemical interactions in CMP explored through CeO2-SiO2 studies. Ceramics International 2024. Digital Object Identifier: 10.1016/j.ceramint.2024.08.444

Wei, S.; Roy, D., Galvanodynamic probing of tribologically assisted material removal under chemical control: A cobalt/copper case study for application in chemical mechanical planarization. Tribology International 2023, 179, 108185. Digital Object Identifier: 10.1016/j.triboint.2022.108185

Seo, J.; Kim, K.; Kang, H.; Babu, S., Perspective—Recent Advances and Thoughts on Ceria Particle Applications in Chemical Mechanical Planarization. ECS Journal of Solid State Science and Technology 2022, 11 (8), 084003. Digital Object Identifier: 10.1149/2162-8777/ac8310

Ranaweera, C. K.; Babu, S. V.; Hamada, S.; Seo, J., Measurement of the force required to move ceria particles from SiO2 surfaces using lateral force microscopy. Journal of Materials Research 2022, 37 (10), 1789-1797. Digital Object Identifier: 10.1557/s43578-022-00584-4

Lee, K.; Seo, J., Suppression of Dissolution Rate via Coordination Complex in Tungsten Chemical Mechanical Planarization. Applied Sciences (Switzerland) 2022, 12 (3), 1227. Digital Object Identifier: 10.3390/app12031227

Wei, S.; Johnson, C. A.; Roy, D., Probing the Mechanisms of Metal CMP Using Tribo-Electroanalytical Measurements: Results for a Copper/Malonate System. ECS Journal of Solid State Science and Technology 2021, 10 (3), 034001. Digital Object Identifier: 10.1149/2162-8777/abe7a7

Seo, J.; Othman, A.; Kim, H. J.; Devabhaktuni, J.; Trivedi, R.; Penigalapati, D.; Kulasingam, T.; Hanup Vegi, S. S. R. K.; Babu, S. V., Storage Temperature Effects on the Slurry Health Parameters and SiO2Removal Rates during Chemical Mechanical Polishing. ECS Journal of Solid State Science and Technology 2021, 10 (10), 104002. Digital Object Identifier: 10.1149/2162-8777/ac2c56

Seo, J.; Gowda, A.; Khajornrungruang, P.; Hamada, S.; Babu, S. V., 3D trajectories and diffusion of single ceria particles near a glass surface and their removal. Journal of Materials Research 2021, 36 (1), 258-267. Digital Object Identifier: 10.1557/s43578-020-00067-4

Seo, J., Challenges and solutions for post-CMP cleaning at device and interconnect levels. In Advances in Chemical Mechanical Planarization (CMP), 2021; pp 503-532. https://doi.org/10.1016/B978-0-12-821791-7.00010-1.

Seo, J., A review on chemical and mechanical phenomena at the wafer interface during chemical mechanical planarization. Journal of Materials Research 2021, 36 (1), 235-257. Digital Object Identifier: 10.1557/s43578-020-00060-x

Roy, D., Electrochemical techniques and their applications for CMP of metal films. In Advances in Chemical Mechanical Planarization (CMP), 2021; pp 51-94. https://doi.org/10.1016/B978-0-12-821791-7.00009-5.

Lee, K.; Seo, J.; Paik, U., Preparation and characterization of slurry for CMP. In Advances in Chemical Mechanical Planarization (CMP), 2021; pp 323-354. https://doi.org/10.1016/B978-0-12-821791-7.00005-8.

Kenchappa, N. B.; Popuri, R.; Chockkalingam, A.; Jawali, P.; Jayanath, S.; Redfield, D.; Bajaj, R., Soft chemical mechanical polishing pad for oxide CMP applications. ECS Journal of Solid State Science and Technology 2021, 10 (1), 014008. Digital Object Identifier: 10.1149/2162-8777/abdc40

Johnson, C. A.; Liu, J.; White, M. L.; Roy, D., Tribo-Electrochemistry of Post-CMP Cleaning: Results for Co and Cu Wafer Films Brushed in Different Solutions. ECS Journal of Solid State Science and Technology 2021, 10 (5), 054005. Digital Object Identifier: 10.1149/2162-8777/abfc65

Babu, S., Advances in Chemical Mechanical Planarization (CMP): A volume in Woodhead Publishing Series in Electronic and Optical Materials. 2021; p 1-632. https://doi.org/10.1016/B978-0-12-821791-7.00085-X.

Seo, J.; Gowda, A.; Khajornrungruang, P.; Hamada, S.; Babu, S. V., 3D trajectories and diffusion of single ceria particles near a glass surface and their removal. Journal of Materials Research 2020. Digital Object Identifier: 10.1557/jmr.2020.246

Seo, J., A review on chemical and mechanical phenomena at the wafer interface during chemical mechanical planarization. Journal of Materials Research 2020. Digital Object Identifier: 10.1557/jmr.2020.215

Gowda, A.; Rai, S.; Zhuang, Y.; Fan, W., A Novel Method to Quantify Conditioner-to-Conditioner Variation and Predict Conditioner Lifetime and Process Failure Mode in Chemical Mechanical Planarization (CMP) Environment. IEEE Transactions on Semiconductor Manufacturing 2020, 33 (4), 614-621, 9217574. Digital Object Identifier: 10.1109/TSM.2020.3029763

Simpson, D. E.; Johnson, C. A.; Roy, D., Pulsed galvanostatic electrodeposition of copper on cobalt using a pH-neutral plating bath and electroless seeds. Journal of the Electrochemical Society 2019, 166 (1), D3142-D3154. Digital Object Identifier: 10.1149/2.0171901jes

Seo, J.; Vegi, S. S. R. K. H.; Babu, S. V., Post-CMP cleaning solutions for the removal of organic contaminants with reduced galvanic corrosion at copper/cobalt interface for advanced Cu interconnect applications. ECS Journal of Solid State Science and Technology 2019, 8 (8), P379-P387. Digital Object Identifier: 10.1149/2.0011908jss

Ranaweera, C. K.; Baradanahalli, N. K.; Popuri, R.; Seo, J.; Babu, S. V., Ammonium persulfate and potassium oleate containing silica dispersions for chemical mechanical polishing for cobalt interconnect applications. ECS Journal of Solid State Science and Technology 2019, 8 (5), P3001-P3008. Digital Object Identifier: 10.1149/2.0021905jss

Lagudu, U. R. K.; Korkmaz, S.; Gowda, A.; Penta, N. K.; Babu, S. V., Reactive liquids for non–Prestonian chemical mechanical polishing of polysilicon films. ECS Journal of Solid State Science and Technology 2019, 8 (5), P3040-P3046. Digital Object Identifier: 10.1149/2.0081905jss

Johnson, C. A.; Roy, D., In situ electrochemical evaluation of post-CMP cleaning reactions for cobalt and copper films under brushing conditions. ECS Journal of Solid State Science and Technology 2019, 8 (5), P3163-P3174. Digital Object Identifier: 10.1149/2.0241905jss

Roy, D., Electrochemical assessment of slurry formulations for chemical mechanical planarization of metals: Trends, benefits and challenges. ECS Journal of Solid State Science and Technology 2018, 7 (5), P209-P212. Digital Object Identifier: 10.1149/2.0231804jss

Rastegar, V., Effect of large particles during chemical mechanical polishing based on numerical modeling of abrasive particle trajectories and material removal non-uniformity. IEEE Transactions on Semiconductor Manufacturing 2018, 31 (2), 277-284. Digital Object Identifier: 10.1109/TSM.2018.2796564

Odeh, F.; Al-Bawab, A.; Li, Y. In Dynamic NMR Study of Model CMP Slurry Containing Silica Particles as Abrasives, IOP Conference Series: Materials Science and Engineering, 2018. https://doi.org/10.1088/1757-899X/305/1/012023.

Johnson, C. A.; Wei, S.; Roy, D., An alkaline slurry design for Co-Cu CMP systems evaluated in the tribo-electrochemical approach. ECS Journal of Solid State Science and Technology 2018, 7 (2), P38-P49. Digital Object Identifier: 10.1149/2.0091802jss

Dumitrescu, E.; Karunaratne, D. P.; Babu, S. V.; Wallace, K. N.; Andreescu, S., Interaction, transformation and toxicity assessment of particles and additives used in the semiconducting industry. Chemosphere 2018, 192, 178-185. Digital Object Identifier: 10.1016/j.chemosphere.2017.10.138

You, K.; Seo, J.; Joo Hyun Kim, P.; Song, T., Control of tungsten protrusion with surface active agent during tungsten chemical mechanical polishing. ECS Journal of Solid State Science and Technology 2017, 6 (12), P822-P827. Digital Object Identifier: 10.1149/2.0151712jss

Wang, Y.; Teugels, L.; Vandersmissen, K.; de Gendt, S.; Krishnan, S.; Struyf, H. In Effect of deposition methods on material removal rate during nickel CMP, ICPT 2017 - International Conference on Planarization/CMP Technology, 2017; pp 48-53.

Turk, M. C.; Walters, M. J.; Roy, D., Tribo-electrochemical investigation of a slurry composition to reduce dissolution and galvanic corrosion during chemical mechanical planarization of Cu-Ru interconnects. Materials Chemistry and Physics 2017, 201, 271-288. Digital Object Identifier: 10.1016/j.matchemphys.2017.08.052

Turk, M. C.; Walters, M. J.; Roy, D., Experimental considerations for using electrochemical impedance spectroscopy to study chemical mechanical planarization systems. Electrochimica Acta 2017, 224, 355-368. Digital Object Identifier: 10.1016/j.electacta.2016.12.062

Tseng, W. T.; Wu, C.; Hagan, J.; Wang, Y.; Lin, H.; Han, J. H.; Koli, D. In Microreplicated CMP pad for RMG and MOL metallization, IITC 2017 - 2017 IEEE International Interconnect Technology Conference, 2017. https://doi.org/10.1109/IITC-AMC.2017.7968954.

Sagi, K. V.; Teugels, L. G.; Van Der Veen, M. H.; Struyf, H.; Babu, S. V., Chemical mechanical polishing and planarization of Mn-based barrier/Ru liner films in Cu interconnects for advanced metallization nodes. ECS Journal of Solid State Science and Technology 2017, 6 (5), P259-P264. Digital Object Identifier: 10.1149/2.0161705jss

Popuri, R.; Amanapu, H.; Ranaweera, C. K.; Baradanahalli, N. K.; Babu, S. V., Potassium oleate as a dissolution and corrosion inhibitor during chemical mechanical planarization of chemical vapor deposited Co films for interconnect applications. ECS Journal of Solid State Science and Technology 2017, 6 (12), P845-P852. Digital Object Identifier: 10.1149/2.0251712jss

Othman, A.; Andreescu, D.; Karunaratne, D. P.; Babu, S. V.; Andreescu, S., Functional Paper-Based Platform for Rapid Capture and Detection of CeO2 Nanoparticles. ACS Applied Materials and Interfaces 2017, 9 (14), 12893-12905. Digital Object Identifier: 10.1021/acsami.7b02823

Alety, S. R.; Lagudu, U. R. K.; Popuri, R.; Patlolla, R.; Surisetty, C. V. V. S.; Babu, S. V., Cleaning solutions for ultrathin Co barriers for advanced technology nodes. ECS Journal of Solid State Science and Technology 2017, 6 (9), P671-P680. Digital Object Identifier: 10.1149/2.0351709jss

Turk, M. C.; Shi, X.; Gonyer, D. A. J.; Roy, D., Chemical and mechanical aspects of a Co-Cu planarization scheme based on an alkaline slurry formulation. ECS Journal of Solid State Science and Technology 2016, 5 (2), P88-P99. Digital Object Identifier: 10.1149/2.0271602jss

Sagi, K. V.; Babu, S. V. In Mitigation of corrosion challenges for barrier films at advanced nodes, China Semiconductor Technology International Conference 2016, CSTIC 2016, 2016. https://doi.org/10.1109/CSTIC.2016.7464038.

Roy, D., Electrochemical techniques and their applications for chemical mechanical planarization (CMP) of metal films. In Advances in Chemical Mechanical Planarization (CMP), 2016; pp 1-89. https://doi.org/10.1016/B978-0-08-100165-3.00003-6.

Ong, P.; Teugels, L.; Delande, M.; Bhonsle, R.; Ansar, S.; Siebert, M.; Leunissen, L. In Updates on Ge and SiGe CMP processes for integration as high mobility channel materials, 2015 International Conference on Planarization/CMP Technology, ICPT 2015, 2016.

Babu, S., Advances in Chemical Mechanical Planarization (CMP). 2016; p 1-511. https://doi.org/10.1016/C2014-0-01445-1.

Srinivasan, R.; Dandu, P. V. R.; Babu, S. V., Shallow trench isolation chemical mechanical planarization: A review. ECS Journal of Solid State Science and Technology 2015, 4 (11), P5029-P5039. Digital Object Identifier: 10.1149/2.0071511jss

Speed, D.; Westerhoff, P.; Sierra-Alvarez, R.; Draper, R.; Pantano, P.; Aravamudhan, S.; Chen, K. L.; Hristovski, K.; Herckes, P.; Bi, X.; Yang, Y.; Zeng, C.; Otero-Gonzalez, L.; Mikoryak, C.; Wilson, B. A.; Kosaraju, K.; Tarannum, M.; Crawford, S.; Yi, P.; Liu, X.; Babu, S. V.; Moinpour, M.; Ranville, J.; Montano, M.; Corredor, C.; Posner, J.; Shadman, F., Physical, chemical, and in vitro toxicological characterization of nanoparticles in chemical mechanical planarization suspensions used in the semiconductor industry: Towards environmental health and safety assessments. Environmental Science: Nano 2015, 2 (3), 227-244. Digital Object Identifier: 10.1039/c5en00046g

Shi, X.; Simpson, D. E.; Roy, D., Tribo-electrochemical characterization of Ru, Ta and Cu CMP systems using percarbonate based solutions. ECS Journal of Solid State Science and Technology 2015, 4 (11), P5058-P5067. Digital Object Identifier: 10.1149/2.0101511jss

Korkmaz, S.; Babu, S. V., Ceria-based slurries for non-prestonian removal of silicon dioxide films. ECS Journal of Solid State Science and Technology 2015, 4 (2), P36-P41. Digital Object Identifier: 10.1149/2.0091502jss

Karunaratne, D. P.; Goia, D. V., Effect of linear aliphatic polyamines on copper removal rate in chemical mechanical planarization (CMP). ECS Journal of Solid State Science and Technology 2015, 4 (11), P5040-P5042. Digital Object Identifier: 10.1149/2.0081511jss

Bhonsle, R. K.; Teugels, L.; Ibrahim, S. A. U.; Ong, P.; Delande, M.; Krishnan, S.; Siebert, M.; Struyf, H.; Leunissen, L. H. A., Inspection, characterization and classification of defects for improved CMP of III-V materials. ECS Journal of Solid State Science and Technology 2015, 4 (11), P5073-P5077. Digital Object Identifier: 10.1149/2.0111511jss

Babu, S. V., Chemical mechanical planarization: Advanced material and consumable challenges. ECS Journal of Solid State Science and Technology 2015, 4 (11), Y11. Digital Object Identifier: 10.1149/2.0191511jss

Zhong, M.; Venkataraman, S. S.; Lan, Y.; Li, Y.; Shipp, D. A., Role of 1,2,4-triazole as a passivating agent for cobalt during post-chemical mechanical planarization cleaning. Journal of the Electrochemical Society 2014, 161 (3), C138-C144. Digital Object Identifier: 10.1149/2.093403jes

Mu, Y.; Zhong, M.; Rushing, K. J.; Li, Y.; Shipp, D. A., Benzotriazole as a passivating agent during chemical mechanical planarization of Ni-P alloy substrates. Applied Surface Science 2014, 315 (1), 190-195. Digital Object Identifier: 10.1016/j.apsusc.2014.07.096

Matovu, J. B.; Ong, P.; Teugels, L. G.; Leunissen, L. H. A.; Babu, S. V., Chemical mechanical planarization of patterned InP in shallow trench isolation (STI) template structures using hydrogen peroxide-based silica slurries containing oxalic acid or citric acid. Microelectronic Engineering 2014, 116, 17-21. Digital Object Identifier: 10.1016/j.mee.2013.11.009

Lagudu, U. R. K.; Isono, S.; Krishnan, S.; Babu, S. V., Role of ionic strength in chemical mechanical polishing of silicon carbide using silica slurries. Colloids and Surfaces A: Physicochemical and Engineering Aspects 2014, 445, 119-127. Digital Object Identifier: 10.1016/j.colsurfa.2014.01.038

Jiang, L.; Lan, Y.; He, Y.; Li, Y.; Luo, J., Functions of Trilon ® P as a polyamine in copper chemical mechanical polishing. Applied Surface Science 2014, 288, 265-274. Digital Object Identifier: 10.1016/j.apsusc.2013.10.020

Jiang, L.; He, Y.; Li, Y.; Luo, J., Effect of ionic strength on ruthenium CMP in H 2 O 2 -based slurries. Applied Surface Science 2014, 317, 332-337. Digital Object Identifier: 10.1016/j.apsusc.2014.08.063

Jiang, L.; He, Y.; Li, Y.; Li, Y.; Luo, J., Synergetic effect of H2O2 and glycine on cobalt CMP in weakly alkaline slurry. Microelectronic Engineering 2014, 122, 82-86. Digital Object Identifier: 10.1016/j.mee.2014.02.002

Zhang, K.; Zhang, T.; Wang, F.; Yuan, Y.; Li, Y., Exploration on chemical mechanical planarization of ZnO functional thin films for novel devices. Microelectronic Engineering 2013, 101, 37-41. Digital Object Identifier: 10.1016/j.mee.2012.08.007

Turk, M. C.; Simpson, D. E.; Roy, D., Examination of salicylaldehyde as a surface modifier of manganese for application in chemical mechanical planarization. ECS Journal of Solid State Science and Technology 2013, 2 (11), P498-P505. Digital Object Identifier: 10.1149/2.041311jss

Turk, M. C.; Rock, S. E.; Amanapu, H. P.; Teugels, L. G.; Roy, D., Investigation of percarbonate based slurry chemistry for controlling galvanic corrosion during CMP of ruthenium. ECS Journal of Solid State Science and Technology 2013, 2 (5), P205-P213. Digital Object Identifier: 10.1149/2.009305jss

Penta, N. K.; Peethala, B. C.; Amanapu, H. P.; Melman, A.; Babu, S. V., Role of hydrogen bonding on the adsorption of several amino acids on SiO2 and Si3N4 and selective polishing of these materials using ceria dispersions. Colloids and Surfaces A: Physicochemical and Engineering Aspects 2013, 429, 67-73. Digital Object Identifier: 10.1016/j.colsurfa.2013.03.046

Penta, N. K.; Amanapu, H. P.; Peethala, B. C.; Babu, S. V., Use of anionic surfactants for selective polishing of silicon dioxide over silicon nitride films using colloidal silica-based slurries. Applied Surface Science 2013, 283, 986-992. Digital Object Identifier: 10.1016/j.apsusc.2013.07.057

Matovu, J. B.; Ong, P.; Leunissen, L. H. A.; Krishnan, S.; Babua, S. V., Fundamental investigation of chemical mechanical polishing of gaas in silica dispersions: Material removal and arsenic trihydride formation pathways. ECS Journal of Solid State Science and Technology 2013, 2 (11), P432-P439. Digital Object Identifier: 10.1149/2.008311jss

Matovu, J. B.; Ong, P.; Leunissen, L. H. A.; Krishnan, S.; Babu, S. V., Use of multifunctional carboxylic acids and hydrogen peroxide to improve surface quality and minimize phosphine evolution during chemical mechanical polishing of indium phosphide surfaces. Industrial and Engineering Chemistry Research 2013, 52 (31), 10664-10672. Digital Object Identifier: 10.1021/ie400689q

Krishna Lagudu, U. R.; Chockalingam, A. M.; Babu, S. V., Chemical mechanical polishing of Al-Co films for replacement metal gate applications. ECS Journal of Solid State Science and Technology 2013, 2 (5), Q77-Q82. Digital Object Identifier: 10.1149/2.012305jss

Economikos, L.; Zhang, X.; Hwang, H.; Kwon, U.; Wong, K.; Escarabajal, Y.; Lagudu, U. R. K.; Chockalingam, A.; Babu, S. V. In Al CMP for low resistance gate fill for 20nm and beyond replacement metal gate, Materials Research Society Symposium Proceedings, 2013; pp 7-13. https://doi.org/10.1557/opl.2013.873.

Chockalingam, A. M.; Lagudu, U. R. K.; Babu, S. V., Potassium periodate-based solutions for minimizing galvanic corrosion at the Cu-Mn interface and for polishing the associated Cu interconnect structures. ECS Journal of Solid State Science and Technology 2013, 2 (4), P160-P165. Digital Object Identifier: 10.1149/2.026304jss

Amanapu, H. P.; Lagudu, U. R. K.; Teki, R.; John-Kadaksham, A.; Babu, S. V. In Chemical mechanical polishing for extreme ultraviolet lithography mask substrates, ECS Transactions, 2013; pp 73-79. https://doi.org/10.1149/05039.0073ecst.

Amanapu, H. P.; Lagudu, U. R. K.; John-Kadaksham, A.; Babu, S. V.; Teki, R., Abrasive-free polishing for extreme ultraviolet lithography mask substrates. ECS Journal of Solid State Science and Technology 2013, 2 (9), P362-P367. Digital Object Identifier: 10.1149/2.015309jss

Victoria, S. N.; Jebaraj, J.; Suni, I. I.; Ramanathan, S., Chemical mechanical planarization of ruthenium with oxone as oxidizer. Electrochemical and Solid-State Letters 2012, 15 (3), H55-H58. Digital Object Identifier: 10.1149/2.005203esl

Tran, C.; Zhang, P.; Sun, L.; Penta, N. K.; Lagudu, U. R. K.; Shipp, D.; Babu, S. V. In Development of post-CMP cleaners for better defect performance, ECS Transactions, 2012; pp 565-571. https://doi.org/10.1149/1.3694370.

Teki, R.; John Kadaksham, A.; House, M.; Harris-Jones, J.; Ma, A.; Babu, S. V.; Hariprasad, A.; Dumas, P.; Jenkins, R.; Provine, J.; Richmann, A.; Stowers, J.; Meyers, S.; Dietze, U.; Kusumoto, T.; Yatsui, T.; Ohtsu, M.; Goodwin, F. In Alternative smoothing techniques to mitigate EUV substrate defectivity, Proceedings of SPIE - The International Society for Optical Engineering, 2012. https://doi.org/10.1117/12.916497.

Shi, X.; Rock, S. E.; Turk, M. C.; Roy, D., Minimizing the effects of galvanic corrosion during chemical mechanical planarization of aluminum in moderately acidic slurry solutions. Materials Chemistry and Physics 2012, 136 (2-3), 1027-1037. Digital Object Identifier: 10.1016/j.matchemphys.2012.08.044

Rock, S. E.; Crain, D. J.; Pettit, C. M.; Roy, D., Surface-complex films of guanidine on tantalum nitride electrochemically characterized for applications in chemical mechanical planarization. Thin Solid Films 2012, 520 (7), 2892-2900. Digital Object Identifier: 10.1016/j.tsf.2011.12.005

Peddeti, S.; Ong, P.; Leunissen, L. H. A.; Babu, S. V., Chemical mechanical planarization of germanium shallow trench isolation structures using silica-based dispersions. Microelectronic Engineering 2012, 93, 61-66. Digital Object Identifier: 10.1016/j.mee.2011.12.015

Volkov, D. O.; Dandu, P. R. V.; Goodman, H.; Santora, B.; Sokolov, I., Influence of adhesion of silica and ceria abrasive nanoparticles on Chemical-Mechanical Planarization of silica surfaces. Applied Surface Science 2011, 257 (20), 8518-8524. Digital Object Identifier: 10.1016/j.apsusc.2011.04.142

Sulyma, C. M.; Pettit, C. M.; Surisetty, C. V. V. S.; Babu, S. V.; Roy, D., Electrochemical investigation of the roles of oxyanions in chemical-mechanical planarization of tantalum and tantalum nitride. Journal of Applied Electrochemistry 2011, 41 (5), 561-576. Digital Object Identifier: 10.1007/s10800-011-0262-7

Rock, S. E.; Crain, D. J.; Zheng, J. P.; Pettit, C. M.; Roy, D., Electrochemical investigation of the surface-modifying roles of guanidine carbonate in chemical mechanical planarization of tantalum. Materials Chemistry and Physics 2011, 129 (3), 1159-1170. Digital Object Identifier: 10.1016/j.matchemphys.2011.05.079

Penta, N. K.; Matovu, J. B.; Veera, P. R. D.; Krishnan, S.; Babu, S. V., Role of polycation adsorption in poly-Si, SiO2 and Si3N4 removal during chemical mechanical polishing: Effect of polishing pad surface chemistry. Colloids and Surfaces A: Physicochemical and Engineering Aspects 2011, 388 (1-3), 21-28. Digital Object Identifier: 10.1016/j.colsurfa.2011.07.039

Penta, N. K.; Dandu Veera, P. R.; Babu, S. V., Role of poly(diallyldimethylammonium chloride) in selective polishing of polysilicon over silicon dioxide and silicon nitride films. Langmuir 2011, 27 (7), 3502-3510. Digital Object Identifier: 10.1021/la104257k

Peethala, B. C.; Roy, D.; Babu, S. V., Controlling the galvanic corrosion of copper during chemical mechanical planarization of ruthenium barrier films. Electrochemical and Solid-State Letters 2011, 14 (7), H306-H310. Digital Object Identifier: 10.1149/1.3589308

Matovu, J. B.; Penta, N. K.; Peddeti, S.; Babu, S. V., Chemical mechanical polishing of Ge in hydrogen peroxide-based silica slurries: Role of ionic strength. Journal of the Electrochemical Society 2011, 158 (11), H1152-H1160. Digital Object Identifier: 10.1149/2.055111jes

Foreman, E. A.; Habitz, P. A.; Cheng, M. C.; Tamon, C., Inclusion of chemical-mechanical polishing variation in statistical static timing analysis. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 2011, 30 (11), 1758-1762, 6046170. Digital Object Identifier: 10.1109/TCAD.2011.2162066

Yu, J.; Jia, D.; Venkataraman, S. S.; Li, Y., 1H -benzotriazole incorporated pad for chemical mechanical planarization of copper. Journal of the Electrochemical Society 2010, 157 (3), H312-H317. Digital Object Identifier: 10.1149/1.3276059

Wang, K.; Li, Y. Z.; Kang, R. K.; Guo, D. M., Generation and removal of pits during chemical mechanical polishing process for MgO single crystal substrate. Applied Surface Science 2010, 256 (9), 2691-2699. Digital Object Identifier: 10.1016/j.apsusc.2009.10.082

Wang, B.; Li, Y.; Gao, H., Water-in-oil dispersion for KH2PO4 (KDP) crystal CMP. Journal of Dispersion Science and Technology 2010, 31 (12), 1611-1617. Digital Object Identifier: 10.1080/01932690903297330

Victoria, S. N.; Sharma, P. P.; Suni, I. I.; Ramanathan, S., Potassium bromate as an oxidizing agent in a titania-based Ru CMP slurry. Electrochemical and Solid-State Letters 2010, 13 (11), H385-H387. Digital Object Identifier: 10.1149/1.3481948

Veera Dandu, P. R.; Penta, N. K.; Peethala, B. C.; Babu, S. V., Novel phosphate-functionalized silica-based dispersions for selectively polishing silicon nitride over silicon dioxide and polysilicon films. Journal of Colloid and Interface Science 2010, 348 (1), 114-118. Digital Object Identifier: 10.1016/j.jcis.2010.04.034

Veera Dandu, P. R.; Penta, N. K.; Babu, S. V., Novel α-amine-functionalized silica-based dispersions for selectively polishing polysilicon and Si(100) over silicon dioxide, silicon nitride or copper during chemical mechanical polishing. Colloids and Surfaces A: Physicochemical and Engineering Aspects 2010, 371 (1-3), 131-136. Digital Object Identifier: 10.1016/j.colsurfa.2010.09.019

Veera Dandu, P. R.; Devarapalli, V. K.; Babu, S. V., Reverse selectivity - High silicon nitride and low silicon dioxide removal rates using ceria abrasive-based dispersions. Journal of Colloid and Interface Science 2010, 347 (2), 267-276. Digital Object Identifier: 10.1016/j.jcis.2010.03.071

Surisetty, C. V. V. S.; Peethala, B. C.; Roy, D.; Babu, S. V., Utility of oxy-anions for selective low pressure polishing of Cu and Ta in chemical mechanical planarization. Electrochemical and Solid-State Letters 2010, 13 (7), H244-H247. Digital Object Identifier: 10.1149/1.3418616

Sulyma, C. M.; Roy, D., Electrochemical characterization of surface complexes formed on Cu and Ta in succinic acid based solutions used for chemical mechanical planarization. Applied Surface Science 2010, 256 (8), 2583-2595. Digital Object Identifier: 10.1016/j.apsusc.2009.10.108

Sharma, P. P.; Suni, I.; Brands, M.; Li, Y., Poly(ethyleneimine) as a passivating agent for Ta chemical mechanical planarization. Electrochemical and Solid-State Letters 2010, 13 (12), H416-H418. Digital Object Identifier: 10.1149/1.3489072

Janjam, S. V. S. B.; Peethala, B. C.; Zheng, J. P.; Babu, S. V.; Roy, D., Electrochemical investigation of surface reactions for chemically promoted chemical mechanical polishing of TaN in tartaric acid solutions. Materials Chemistry and Physics 2010, 123 (2-3), 521-528. Digital Object Identifier: 10.1016/j.matchemphys.2010.05.008

Huang, D. P.; Babu, S. V.; Wang, L.; Moser, T. In Effect of CMP pad and slurry on STI and ILD polishing, ECS Transactions, 2010; pp 23-29. https://doi.org/10.1149/1.3489042.

Benner, S. J.; Perez, G.; Peters, D. W.; Li, Y. In Pad surface management as a strategy to reduce the cost of ownership for CMP, ASMC (Advanced Semiconductor Manufacturing Conference) Proceedings, 2010; pp 232-235. https://doi.org/10.1109/ASMC.2010.5551459.