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Clarkson University Center for Advanced Materials Processing Organizes 18th Annual International Symposium on Chemical-Mechanical Planarization
More than 100 researchers from several high- technology companies, suppliers and universities from the United States, Japan, Korea, China, Taiwan, Belgium, and Canada, gathered in Lake Placid, N.Y., in August for the 18th International Symposium on Chemical-Mechanical Planarization (CMP), sponsored by Clarkson University’s Center for Advanced Materials Processing (CAMP).
Speakers included engineers and scientists from IBM, Intel, Micron, GLOBALFOUNDRIES, Samsung, SEMATECH, Ebara, Dow Electronic Materials, Cabot Micro, Applied Materials, Pall, Entegris, Fujimi, Fujiplanar, IMEC in Belgium and others. University speakers were from Kyushu University and Kyushu Institute of Technology, and Shizuoka from Japan, SKKU and Hanyang from Korea, National Taiwan University, and CNSE and Clarkson.
Chemical-mechanical planarization or chemical-mechanical polishing -- CMP for short -- is a process that uses nano-sized abrasives in a reactive chemical dispersion to polish various layers on the surface of wafers used in semiconductor fabrication to achieve nanolevel planarity (a flat and uniformly smooth surface).
CMP is an enabling technology that translates into faster computers, more realistic video games, smaller cell phones and more efficient performance from the various electronic devices we use daily in our homes and businesses.
Since the wafers typically have a 300 mm diameter, this planarity extends over an eight-orders-of-magnitude length scale.
This technology plays a critical role in today’s microelectronics industry and is the ideal planarizing technology for use with the interlayer dielectrics and metal films used in all forms of logic and memory devices extending down to14 nanometer feature sizes. Clarkson University and CAMP are internationally recognized for expertise in this remarkable technology.
This year’s event focused on several fundamental aspects of chemical-mechanical planarization, including particle and colloidal aspects, polishing mechanisms, pad/conditioning behavior, flow characterization, copper/barrier film planarization, defects and post-polish cleaning, low-k films and integration challenges, 300 mm wafer issues and transition to 450 mm, STI (shallow trench isolation), Nitride/Poly (silicon nitride/polysilicon) and polishing of new channel and barrier materials like germanium, indium phosphide, ruthenium, cobalt, silicon carbide, etc.
Distinguished University Professor S.V. Babu, the director of CAMP, served as the lead organizer of this year’s symposium, as he has for the past 17 years. He was assisted by co-chairs Hirokuni Hiyama (division executive for technologies, R&D, IP Division at Ebara Corporation in Japan), Jin-Goo Park (professor, Department of Materials Engineering and vice dean at Hanyang University in Korea), Charan Surisetty (unit process engineering professional at IBM), Joseph Steigerwald (Intel fellow; technology and manufacturing group and director of Chemical Mechanical Polish Technology), Matt Prince (principal engineer, Intel), Lee Cook (technology fellow and Global Slurry R&D director, Dow Electronic Materials), and Rajeev Bajaj (director at Applied Materials).
Monday night’s after dinner speaker, Mark Dougherty (IBM director – Unit Process Development, SRDC- IBM Microelectronics Division), was introduced by Clarkson University President Tony Collins. He delivered an insightful talk, titled “The Silicon Process Roadmap: Where is it Taking Us?”
Tuesday evening featured an award and recognition for CAMP Deputy Director John (Jack) Prendergast as he retires. Distinguished University Professor / CAMP Director S.V. Babu presented an award to Jack for his excellent contributions to CAMP’s success.
The symposium included a poster session dedicated to the memory and contributions of the late Clarkson Prof. Yuzhuo Li.
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cmp-organizers-2013.jpg: Organizers of the 18th International Symposium on Chemical-Mechanical Planarization held in Lake Placid. From left: Charan Surisetty (unit process engineering professional at IBM), Hirokuni Hiyama (division executive for technologies, R&D, IP Division at Ebara Corporation in Japan), Clarkson University Distinguished University Professor and CAMP Director S.V. Babu, and Jin-Goo Park (professor, Department of Materials Engineering and vice dean at Hanyang University in Korea).
cmp-li-memorial.jpg: A poster session emphasizing the Clarkson University Center for Advanced Materials Processing’s research in chemical-mechanical planarization (CMP) was dedicated to the memory and contributions of Yuzhuo Li. He was the head of research and development for Global Business Electronic Materials at BASF in Ludwigshafen, Germany and also served as a professor in Clarkson University’s Department of Chemistry. From left: Distinguished University Professor and CAMP Director S.V. Babu, Clarkson University President Tony Collins, Kenneth Rushing (research assistant professor and LASP manager at Clarkson and a former graduate student for Prof. Yuzhuo Li), and CAMP Deputy Director Jack Prendergast.
cmp-dougherty.jpg: Several symposium attendees join the after dinner speaker Mark Dougherty (IBM director – Unit Process Development, SRDC- IBM Microelectronics Division). From Left: Hirokuni Hiyama (division executive for Technologies, R&D, IP Division at Ebara Corporation in Japan), Chao-Chang Arthur Chen (director CMP Innovation Center Distinguished Professor in the Department of Mechanical Engineering at National Taiwan University of Science and Technology, Taiwan), S.V. Babu (Distinguished University Professor/CAMP Director, Clarkson University), Dougherty, Clarkson University President Tony Collins, Greg Akiki of IBM (Director, G450c), and CAMP Deputy Director Jack Prendergast.
cmp-prendergast-award.jpg: Distinguished University Professor/CAMP Director S.V. Babu (right) presents a plaque to CAMP Deputy Director Jack Prendergast at his retirement celebration. The special award was presented "in recognition of Prendergast’s excellent contributions to CAMP’s success."
[Photographs for media use are available at http://www.clarkson.edu/news/photos/cmp-organizers-2013.jpg, http://www.clarkson.edu/news/photos/cmp-li-memorial.jpg, http://www.clarkson.edu/news/photos/cmp-dougherty.jpg, and http://www.clarkson.edu/news/photos/cmp-prendergast-award.jpg.]