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Recent Publications: (For Complete Publications Click Here)

2011

Complexing between additives and ceria abrasives used for polishing silicon dioxide and silicon nitride films: Liangyong Wang, Bo Liu, Zhitang Song, Weili Liu, Songlin Feng, David Huang, S.V Babu, Electrochem. & Solid State Lett., 14, H128 (2011)

Ruthenium polishing with silica abrasive-based slurries containing potassium periodate as the oxidizer B. C. Peethala and S. V. Babu. J. Electrochem. Soc., 158, H271 (2011) 

Role of poly(diallyldimethylammonium chloride) in selective polishing of polysilicon over silicon dioxide and silicon nitride films: Naresh K. Penta, P. R. Dandu Veera , and S. V. Babu, Langmuir, 27, 3502 (2011)

Chemical Mechanical Polishing of Ge Using Colloidal Silica Particles and H2O2: S. Peddeti, P. Ong, L. H. A. Leunissen, and S. V. Babu, Electrochem. & Solid State Lett., 14, H254 (2011)

Silicon Nitride Film Removal during Chemical Mechanical Polishing Using Ceria-Based Dispersions: Veera P Dandu, Brown Peethala, Hariprasad Amanapu and S.V. Babu, J. Electrochem. Soc., 158, H763 (2011)

Controlling the galvanic corrosion of Cu during chemical mechanical planarization of Ru barrier films: B.C. Peethala, D. Roy, and S.V. Babu, Electrochem. & Solid State Lett., 14 H306-H310 (2011)

Electrochemical investigation of the roles of oxyanions in chemical mechanical planarization of Ta and TaN: C.M. Sulyma, C.M. Petit, C.V.V. Surisetty, S.V. Babu And D. Roy,  J. Appl. Electrochem., 41, 561( 2011)

Origin of high oxide to nitride polishing selectivity of ceria-based slurry in the presence of picolinic acid Author(s):  Liangyong Wang, Bo Liu, Zhitang Song, Weili Liu, Songlin Feng, David Huang, S.V Babu, Chinese Physics B, 20, March 2011  

Chemical mechanical polishing of Ge in hydrogen peroxide based slurries: Role of ionic strength: J. B. Matovu, N.K. Penta, S. Peddeti and S.V. Babu, J. Electrochem. Soc., 158 H1152-H1160 (2011)

Role of Polycation Adsorption in Poly-Si, SiO2 and Si3N4 Removal During Chemical Mechanical Polishing: Effect of Polishing Pad Surface Chemistry: Naresh K. Penta, J.B. Matovu, P. R. Dandu, Sita Krishnan, and S. V. Babu, Colloids and Surfaces A 388, 21 (2011)

Charge density and pH effects on polycation adsorption on poly-Si, SiO2 and Si3N4 films and impact on chemical mechanical planarization: N.K. Penta, P.R. Dandu Veera and S.V. Babu ACS Appl. Mater. Interfaces 3, 4126–4132 (2011)

2010

Novel α-Amine-Functionalized Silica-Based Dispersions For Selectively Polishing Polysilicon and Si(100) Over Silicon Dioxide, Silicon Nitride or Copper During Chemical Mechanical Polishing: Veera P Dandu, Naresh K Penta and S.V. Babu, Colloids and Surfaces A: Physicochem. Eng. Aspects, 371, 131 (2010)

Electrochemical investigation of surface reactions for chemically promoted chemical mechanical polishing of TaN in tartaric acid solutions: S. V. S. B. Janjam, B. C. Peethala, J. P. Zheng, S. V. Babu, and D. Roy, Materials Chem. And Phys., 123, 521 (2010) 

Role of Different Additives on Silicon dioxide Film Removal Rate During Chemical Mechanical Polishing Using Ceria-based Dispersions: P. R. Veera Dandu, B. C. Peethala and S. V. Babu, J. Electrochem. Soc. 157, H869 (2010)

Role of Amines and Amino Acids in Enhancing the Removal Rates of Undoped and P-doped Polysilicon Films during Chemical Mechanical Polishing: Veera P Dandu, Naresh Penta and S.V. Babu: Colloids and Surfaces A: Physicochem. Eng. Aspects 366, 68 (2010)

Reverse selectivity - High silicon nitride and low silicon dioxide removal rates using ceria abrasive-based dispersions: P.R. Veera Dandu, V.K. Devarapalli and S. V. Babu. J. Colloid and Interface Sci. 347, 267 (2010)

Utility of Oxyanions for Selective Low-Pressure Polishing of Cu and Ta in Chemical Mechanical Planarization; Charan Surisetty, B.C. Peethala, D. Roy and S.V. Babu, Electrochem. & Solid State Lett. 13 H244 (2010)

Novel Phosphate Functionalized Silica-based Dispersions for Selectively Polishing Silicon Nitride over Silicon Dioxide and Polysilicon films: Veera P Dandu, Naresh K Penta, B.C. Peethala and S. V. Babu, J. Colloid and Interface. Sci. 348, 114 (2010)

Chemical Mechanical Planarization of TaN Wafers using Oxalic and Tartaric Acid Based Slurries: S. V. S. B. Janjam, B. C. Peethala, D. Roy and S. V. Babu, Electrochem. & Solid State Lett. 13, H1 (2010) 

 

2009

Achievement of high planarization efficiency in planarization of copper at a reduced down pressure: S. Pandija, D. Roy, S.V. Babu, Microelectronic Engg., 86,  367 (2009)

Selective Polishing of polysilicon during fabrication of micro-electro-mechanical-systems devices: A. Natarajan, Veera P. R Dandu, S. Hegde, and S.V. Babu, J. Electrochem. Soc. 156, H487 (2009)

Chemical Mechanical Polishing of Methyl Silsesquioxane (MSQ): V.Meled, S.V. Babu, and E. Matijevic, J. Electrochem. Soc.
156, H460 (2009)

Selective Chemical Mechanical Polishing of Silicon Dioxide over Silicon Nitride for Shallow Trench Isolation: Dandu Veera P. R, Shivaji Peddeti and S. V. Babu: J. Electrochem. Soc. 156, H936 (2009)   

 


2008

Colloidal aspects of chemical mechanical planarization: E. Matijević and S.V. Babu, J. Colloid and Surf. Sci. 320, 219 (2008)

Oxalic Acid Based Slurries with Tunable Selectivity for Copper and Tantalum Removal in CMP: S. B. Janjam, C. Surisetty, S. Pandija, D. Roy, S.V. Babu, Electrochem. & Solid State Lett., 11, H66 (2008)

Investigation of dissolution inhibitors for electrochemical mechanical planarization of copper using beta-alanine as a complexing agent: B. K. Klug, C. M. Pettit, S. Pandija, S. V. Babu, and D. Roy, J Applied Electrochemistry 38, 1347 (2008)

Dissolution inhibition in Cu CMP using dodecyl benzene sulfonic acid surfactant with oxalic acid and glycine as compexing agents: C.V.S. Surisetty, P.C. Goonetilleke, D. Roy and S.V. Babu, J. Electrochem. Soc155, H971 (2008)

Tartaric Acid as a Complexing Agent for Selective Removal of Tantalum and Copper during Planarization: S. B. Janjam, S. Peddeti, D. Roy and S.V. Babu, Electrochem. & Solid State Lett. 11, H327 (2008)

 

2007

Comparison of dicarboxylic acids as complexing agents for abrasive-free chemical mechanical planarization of copper: S. Ramakrishnan, S.B. Janjam, U.B. Patri, D. Roy, and S.V. Babu, Microelectronic Engineering 84, 80 (2007).

A model of pad – abrasive interactions in chemical mechanical polishing: E. Paul, J. Horn, Ying Li and S.V. Babu, Electrochem. & Solid State Lett. 10, H131 (2007)

Chemical-mechanical planarization of copper using abrasive free solutions of oxalic acid and hydrogen peroxide: S. Pandija, D. Roy and S.V. Babu, Materials Chem. And Phys. 102, 144 (2007)

Synergistic Roles of Dodecyl Sulfate and Benzotriazole in Enhancing the Efficiency of Chemical-Mechanical Planarization of Copper: Y. Hong, V. K. Devarapalli, D. Roy and S.V. Babu: J. Electrochemical Soc. 154, H444 (2007)

2006

 

Electrochemical impedance characteristics of Ta/Cu contact regions in polishing slurries used for planarization of Cu and Ta: K.A. Assiongbon, S.B. Emery, V.R.K.Gorantla, S.V. Babu and D. Roy, Corrosion Science 48,  372 (2006)

 

Interaction between abrasive particles and films during chemical-mechanical polishing of copper and tantalum: Ying Li, Junzi Zhao, Ping Wu, Yong Lin, S.V. Babu and Yuzhuo Li, Thin Solid Films 497, 321 (2006)

Role of the functional groups of complexing agents in copper slurries: Udaya Patri, Serdar Aksu and S.V. Babu, J. Electrochem. Soc. 153,  G650 (2006)

 

2005

Chemical effects in chemical-mechanical planarization of TaN: Investigation of surface reactions in a peroxide-based alkaline slurry using Fourier transform impedance spectroscopy: V.R.K. Gorantla, S. B. Emery, S. Pandija, S.V. Babu, D. Roy, Materials Letters 59, 690 (2005)

Oxalic acid as a complexing agent in copper planarization slurries: V.R.K.Gorantla, A. Babel. S, Pandija and S. V. Babu, Electrochem. And Solid State Lett. 8, G131-G134, (2005)

Citric acid as a complexing agent in chemical-mechanical planarization of copper: Investigation of surface reactions using impedance spectroscopy: V. R. K. Gorantla, K. A. Assiongbon, S. V. Babu, and D. Roy, J. Electrochem. Soc. 152, G404, (2005)

Ammonium dodecyl sulfate as a dissolution inhibitor surfactant for electrochemical mechanical planarization of copper: Y. Hong, D. Roy and S.V. Babu, Electrochemistry and Solid-State Letters 8, G297 (2005)

Amino acids as complexing agents during chemical mechanical planarization of Cu: V.R.K. Gorantla, E. Matijević, and S.V. Babu, Chemistry of Materials 17, 2076-80, (2005)

Voltage initiated material removal for electrochemical mechanical planarization of copper in NO3 - , glycine and H2 O2 containing electrolytes: P.C. Goonetillake, S.V. Babu and D. Roy, Electrochem. And Solid State Lett. 8, G190, (2005)

Particle adhesion studies relevant to chemical mechanical polishing: Zhenyu Lu, Niels P. Ryde, S.V. Babu, and E. Matijević, Langmuir 21, 9866, (2005)

Chemical-mechanical polishing of Copper using Molybdenum dioxide slurry: S. Hegde, U. Patri and S.V. Babu, J. Mater. Res. 20, 2553 (2005)

The role of amine and carboxyl functional groups of complexing agents in slurries for chemical mechanical polishing of copper: V.R. Gorantla, D. Goia, E. Matijević, and S.V. Babu, J. Electrochem. Soc. 152, G 912 (2005)

Utility of dodecyl sulfate surfactants as dissolution inhibitors in chemical mechanical planarization of copper: Y. Hong, U.B. Patri, S. Ramakrishnan, D. Roy and S.V. Babu: J. Materials Res. 20, 3413 (2005)

2004

Relative Roles of H2O2 and Glycine in Chemical Mechanical Polishing of Copper Studied with Impedance Spectroscopy: J. Lu, J.E. Garland, C.M. Pettit, S.V. Babu, D. Roy, J. Electrochem. Soc. 151, G717, (2004).

Chemical role of peroxide-based alkaline slurries in chemical-mechanical polishing of Ta: Investigation of surface reactions using time resolved impedance spectroscopy: K.A. Assiongbon, S.B. Emery, C.M. Pettit. S.V. Babu and D. Roy, Materials Chem. And Phys. 86, 347, (2004) .

Effect of pH on chemical-mechanical polishing of Cu and Ta: A. Jindal and S.V. Babu: J. Electrochem. Soc. 151, G709, (2004)

Slurry additive effects on the suppression of silicon nitride removal during chemical-mechanical polishing: W.G. America and S.V. Babu, Electrochem. and Solid State Lett. 7, G327, (2004)

Study of surface charge effects on oxide and nitride planrization using alumina/silica mixed abrasive slurries: S. Hegde and S.V. Babu, Electrochem. and Solid State Lett. 7, G317, (2004)

2003

Effect of pH and H2O2 on Ta CMP: Electrochemistry and XPS Studies: S. C. Kuiry, S. Seal, W. Fei, J. Ramsdell, V. Desai, S.V. Babu and Y. Li, J. Electrochem. Soc. 150, C36, (2003)

The effects of process variables on properties and composition of a-Si:C:H films: I. Moskowitz, W. Lanford, and S.V. Babu, J. Materials Res. 18, 129, (2003)

Chemical Mechanical Polishing of Dielectric Films Using Mixed Abrasive Slurries: A. Jindal, S. Hegde, and S.V. Babu, J. Electrochem. Soc., 150, G314, (2003)

The use of monodispersed colloids in the polishing of Copper and Tantalum: Z. Lu, S-H Lee, S.V. Babu, and E. Matijević, J. Colloid and Interface Sci. 261, 55, (2003)

Study of Pattern Density Effects in CMP Using Fixed Abrasive Pads: V. Gorantla, R. Venigalla, L. Economicos, D. Connor, and S.V. Babu, J. Electrochem. Soc. 150, G821, (2003)

Mechanism and an empirical model of fixed abrasive polishing process on a web-format tool: R. Venigalla, L. Economicos, and S.V. Babu, J. Mater. Res. 18, 1659, (2003)

Removal of shallow and deep scratches and pits from copper wafers: S. Hegde and S.V. Babu, Electrochem. and Solid State Letters, 6, G126, (2003)

Effect of mixed abrasives in chemical mechanical polishing of oxide films: Z. Lu, S-H Lee, V.R. Gorantla, S.V. Babu, and E. Matijević, J. Mater. Res. 18, 2323, (2003)

2002

Chemical-mechanical polishing using mixed abrasive slurries: A. Jindal, S. Hegde, and S.V. Babu, Electrochem. and Solid State Letters 5, G48, (2002).

Chemical mechanical polishing of thermal oxide films using silica particles coated with ceria: S-H Lee, Z. Lu, S.V. Babu, and E.Matijevic, J. Materials Res. 17, 2744, (2002)

Mixed abrasive slurry: a study of metal CMP: A. Jindal, S. Hegde and S.V. Babu; Semiconductor Fab Tech 16, (2002)

2001

Chemical-mechanical polishing of copper and tantalum films in potassium iodate-based slurries: Ying Li and S.V. Babu, Electrochem. and Solid State Letters 4, G20, (2001)

Surface morphology and quality of a-Si:C:H: films: I. Moskovitz and S.V. Babu, Thin Solid Films 385, 48, (2001)

Chemical-mechanical polishing of Cu and Ta films using silica abrasives: Y. Li, M. Hariharaputhiran, and S.V. Babu, J. Mater. Res. 16, 1066, (2001)

Chemical mechanical planarization of Cu and Ta: Some recent developments: Y. Li, and S.V. Babu, Semiconductor Fab Tech 259, 13, (2001).

Chemical mechanical planarization of Cu and Ta: Role of different slurry constituents: S.V. Babu, Y. Li, and A. Jindal, JOM, June 2001

2000

Dishing effects during chemical-mechanical polishing of copper in acidic slurries, Q. Luo and S.V. Babu, J. Electrochem. Soc. 147, 4639-4644, (2000).

Hydroxyl radical formation in H2O2-amino acid mixtures and chemical mechanical polishing of copper, M. Hariharaputhiran, J. Zhang, S. Ramarajan, J. J. Keleher, Y. Li, and S. V. Babu, J. Electrochem. Soc. 147, 3820-3826, (2000).

Effect of pH and Ionic Strength on The Chemical-Mechanical Polishing of Tantalum, Ramarajan, S., Li, Y., Hariharaputhiran, M., Her, Y.-S., and Babu, S.V., Electrochemical and Solid-State Letters 3, 232-234, (2000).

Chemical-Mechanical Polishing of Ta, Hariharaputhiran, M., Li, Y., Ramarajan, S., and Babu, S.V., Electrochemical and Solid-State Letters 3, 95-98, (2000).

 

Books Edited:

Chemical-Mechanical Planarization: 2002 MRS meeting Proceedings, Vol. 732E (electronic- only publication), S.V. Babu, R.Singh, N. Hayasaka, and M. Oliver (eds.)

Chemical-mechanical Polishing 2001, Advances and Future Challenges: 2001 MRS Meeting Proceedings, Vol 671, S.V. Babu, K.C. Cadien and H. Yano (eds)

Chemical-Mechanical Polishing: Fundamentals and Challenges: MRS Spring Meeting proceedings, Vol. 566, S.V. Babu, S. Danyluk, M. Krishnan, and M. Tsujimura (eds) (1999).

For Complete Publications Click Here

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Dr. S. V. Babu